6
RF Device Data
Freescale Semiconductor, Inc.
MRF6V12500HR3 MRF6V12500HSR3
TYPICAL CHARACTERISTICS
062
4810
12
0
700
500
400
Pin, INPUT POWER (dBm) PEAK
Figure 9. Output Power versus Input Power
P
out
, OUTPUT POWER (WATTS)
600
TC
=--30_C
VDD
=50Vdc,IDQ
= 200 mA, f = 1030 MHz
Pulse Width = 128
μsec, Duty Cycle = 10%
85_C
55_C
25_C
14
22
30
0
80
100
60
50
Pout, OUTPUT POWER (WATTS) PEAK
Figure 10. Power Gain and Drain Efficiency versus
Output Power
G
ps
, POWER GAIN (dB)
η
D,
DRAIN EFFICIENCY (%)
ηD
21
1000
25_C
TC
=--30_C
85_C
40
20
18
55_C
VDD
=50Vdc,IDQ
= 200 mA, f = 1030 MHz
Pulse Width = 128
μsec, Duty Cycle = 10%
Gps
200
100
300
19
16
17
15
70
30
20
10
250
109
90
TJ, JUNCTION TEMPERATURE (°C)
Figure 11. MTTF versus Junction Temperature
MTTF calculator available at http:/www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
107
106
105
110 130 150 170 190
MTTF (HOURS)
210 230
108
VDD
=50Vdc
Pout
= 500 W Peak
Pulse Width = 128
μsec
Duty Cycle = 10%
ηD
= 62%
VDD
=50Vdc,IDQ
= 200 mA, Pout
= 500 W Peak
f
MHz
Zsource
?
Zload
?
1030
1.36 -- j1.27
2.50 -- j0.17
Zsource
= Test circuit impedance as measured from
gate to ground.
Zload
= Test circuit impedance as measured from
drain to ground.
Figure 12. Series Equivalent Source and Load Impedance
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
Zsource
Zload
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